%0 Journal Article
%T Photo Response Properties of Photovoltaic New Material--Carbon Nitride Thin Films<br>光伏新材料a-CN_x薄膜的光电响应性质
%A Liu Meicang
%A Zhou Zhibin
%A Ding Zhengming
%A Cui Rongqiang
%A <br>刘梅苍
%A 周之斌
%A 丁正明
%A 崔容强
%J 半导体学报
%D 2004
%I 
%X Amorphous carbon nitride a-CN .x. thin films are prepared by reactive ion beam sputtering deposition method using N 2 as working gas and a graphite target .The substrates are crystalline silicon and quartz crystal.The properties of dark conductivity and photo response excited by a halogen lamp are studied,which varies with the processing conditions,phosphor doping,and hydrogen-plasma treatment.These experiments show that the photocurrent response gain of undoped thin film is 18,which is 3.0 after phosphorus soaking.After hydrogen-plasma treatment,it increases to 30.The response time of all of the thin films is about 300.
%K a-CN
%K x
%K ion beam sputtering
%K photo response
%K P-doped a-CN
%K x<br>氮化碳薄膜
%K 磷掺杂a-CNx
%K 离子束溅射
%K 光电响应
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=207DB3659521C266&yid=D0E58B75BFD8E51C&vid=C5154311167311FE&iid=E158A972A605785F&sid=8ACD9060100C26F1&eid=1E9426A299DC9FFD&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=12