Interface States and Valence Band Offsets of Si/GaAs Heterojunction
Si/GaAs异质结界面态及其价带不连续性

The interface states and valence band offsets of Si/GaAs heterojunction have been studiedby the self-consistent EHT method.The lattice mismatch between Si and GaAs is treated bya pseudomorphic lattice model; meanwhile the lattice constants are corrected. The Si/GaAs(111), Si/GaAs(111)and Si/GaAs(110)interfaces are calculated for Si strained and GaAsstrained condition, respectively.It is shown that the interface states and valence band discontinuitiesare dependent not only on the two materials,but also on the strain and orientationsof heterojunction.The results are given and discussed.