%0 Journal Article
%T Interface States and Valence Band Offsets of Si/GaAs Heterojunction<br>Si/GaAs异质结界面态及其价带不连续性
%A Huang Chunhui/Surface Physics Laboratory
%A Fudan University
%A Shanghai
%A <br>黄春晖
%J 半导体学报
%D 1990
%I 
%X The interface states and valence band offsets of Si/GaAs heterojunction have been studiedby the self-consistent EHT method.The lattice mismatch between Si and GaAs is treated bya pseudomorphic lattice model; meanwhile the lattice constants are corrected. The Si/GaAs(111), Si/GaAs(111)and Si/GaAs(110)interfaces are calculated for Si strained and GaAsstrained condition, respectively.It is shown that the interface states and valence band discontinuitiesare dependent not only on the two materials,but also on the strain and orientationsof heterojunction.The results are given and discussed.
%K heterojunction
%K interface states
%K valence band offset
%K strain<br>Si／GaAs
%K 异质结
%K 界面态
%K 价带
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=1F03F293ED7AFADD&yid=8D39DA2CB9F38FD0&vid=708DD6B15D2464E8&iid=DF92D298D3FF1E6E&sid=5CB576B96D187F64&eid=4A2356A1257A12EB&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0