Influence of Etching Parameters on Sidewall Roughness of Silicon Based Waveguide Etched by Inductively Coupled Plasma
ICP刻蚀参数对SOI脊形波导侧壁粗糙度的影响

The relationship between the side-wall roughness of SOI rib-waveguide etched by C 4F 8/SF 6/O 2 inductively coupled plasma (ICP) and the etching parameters is studied.The experimental results show that bias voltage,ratio of C 4F 8/SF 6 and pressure affect the side-wall roughness seriously.To minimize the roughness on waveguide sidewall,lower bias voltage,lower C 4F 8/SF 6 ratio and higher pressure etching condition are preferred.By optimizing the etching parameters,waveguides with smoother side-walls and smaller propagation loss are fabricated successfully.