%0 Journal Article
%T Influence of Etching Parameters on Sidewall Roughness of Silicon Based Waveguide Etched by Inductively Coupled Plasma<br>ICP刻蚀参数对SOI脊形波导侧壁粗糙度的影响
%A Fan Zhongchao
%A Yu Jinzhong
%A Chen Shaowu
%A Yang Di
%A Yan Qingfeng
%A Wang Liangchen
%A <br>樊中朝
%A 余金中
%A 陈少武
%A 杨笛
%A 严清峰
%A 王良臣
%J 半导体学报
%D 2004
%I 
%X The relationship between the side-wall roughness of SOI rib-waveguide etched by C 4F 8/SF 6/O 2 inductively coupled plasma (ICP) and the etching parameters is studied.The experimental results show that bias voltage,ratio of C 4F 8/SF 6 and pressure affect the side-wall roughness seriously.To minimize the roughness on waveguide sidewall,lower bias voltage,lower C 4F 8/SF 6 ratio and higher pressure etching condition are preferred.By optimizing the etching parameters,waveguides with smoother side-walls and smaller propagation loss are fabricated successfully.
%K SOI
%K ICP
%K roughness
%K rib waveguide<br>SOI
%K ICP
%K 粗糙度
%K 脊形光波导
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=B6A7CAE9AB8320BA&yid=D0E58B75BFD8E51C&vid=C5154311167311FE&iid=708DD6B15D2464E8&sid=4C25EB18BC5AA509&eid=C825622C5A891845&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=8