Spontaneous Emission Factor for Stripe Geometry DH Semiconductor Lasers
条形DH半导体激光器的自发发射因子

The relations between the spontaneous emission factor together with the astigmatism factorand the waveguide size, the bias current and different longitudinal mode for the stripe geometrysemiconductor lasers with non-built-in gain guiding were systematically investegated both theo-retically and experimentally.The results show that the variation of the spontaneous emissionfactor with the bias current is not a constant,there is an abrupt change near the threshold cur-rent.The astigmatism factor K obtained by solving self-consistently and simultaneously theoptical field equation and the diffusion equation for non-built-in gain guiding is only a fewtimes as large as that for the built-in index guiding.The reason why the value of the astigma-tism factor is larger by two orders has been found out to be due to the adoption of an imposed-fixed-shaped distribution of the complex refractive index,which is not in agreement with rea-lity.Two disputing expressions for the astigmatism factor has also been cleared up.