%0 Journal Article
%T Spontaneous Emission Factor for Stripe Geometry DH Semiconductor Lasers<br>条形DH半导体激光器的自发发射因子
%A Zhao Yiguang/
%A <br>赵一广
%A 郭长志
%J 半导体学报
%D 1989
%I 
%X The relations between the spontaneous emission factor together with the astigmatism factorand the waveguide size, the bias current and different longitudinal mode for the stripe geometrysemiconductor lasers with non-built-in gain guiding were systematically investegated both theo-retically and experimentally.The results show that the variation of the spontaneous emissionfactor with the bias current is not a constant,there is an abrupt change near the threshold cur-rent.The astigmatism factor K obtained by solving self-consistently and simultaneously theoptical field equation and the diffusion equation for non-built-in gain guiding is only a fewtimes as large as that for the built-in index guiding.The reason why the value of the astigma-tism factor is larger by two orders has been found out to be due to the adoption of an imposed-fixed-shaped distribution of the complex refractive index,which is not in agreement with rea-lity.Two disputing expressions for the astigmatism factor has also been cleared up.
%K Semiconductor lasers
%K Spontaneous emission factor
%K Astigmatism factor<br>半导体
%K 激光器
%K 自发发射因子
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=C2D0C476F74F3F73&yid=1833A6AA51F779C1&vid=F3090AE9B60B7ED1&iid=E158A972A605785F&sid=7ABC4505E3960D2B&eid=7979125BBE749348&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=3