Transient Annealing of As~+ and Si~+ Dually Implanted SI GaAs
As~+、Si~+双注入GaAs瞬态退火的行为

The effects of As~+ implantation on Si~+-implanted SIGaAs have been investigated by usingAs~+ and Si~+ dual implantation and transient annealing.The results for Si implant activationefficiency,carrier mobility and channeling spectrum of dually implanted samples are given,indicating that it is easier to activate the Si implants at low temperature in As~+ and Si~+ duallyimplanted samples than in Si~+ singly implanted ones.And better properties of dually implant-ed samples can be obtained after annealing at a definite high temperature.