%0 Journal Article
%T Transient Annealing of As~+ and Si~+ Dually Implanted SI GaAs<br>As~+、Si~+双注入GaAs瞬态退火的行为
%A Fan Weidong/
%A <br>范伟栋
%A 王渭源
%J 半导体学报
%D 1989
%I 
%X The effects of As~+ implantation on Si~+-implanted SIGaAs have been investigated by usingAs~+ and Si~+ dual implantation and transient annealing.The results for Si implant activationefficiency,carrier mobility and channeling spectrum of dually implanted samples are given,indicating that it is easier to activate the Si implants at low temperature in As~+ and Si~+ duallyimplanted samples than in Si~+ singly implanted ones.And better properties of dually implant-ed samples can be obtained after annealing at a definite high temperature.
%K As~+ and Si~+ dual implantation
%K SI GaAs
%K Transient annealing
%K Activation efficiency
%K Mobility<br>砷离子
%K 硅离子
%K 双注入
%K 瞬态退火
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=71FE90CD1688F307BD52FA2782FC10F6&yid=1833A6AA51F779C1&vid=F3090AE9B60B7ED1&iid=38B194292C032A66&sid=D6354F61445E9456&eid=E1D946F217E3B046&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=1