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半导体学报 1989
A New High Sensitivity GaAs Hall Devices Fabricated by means of Stationary Domain Model
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Abstract:
The opration primciple of the stationary domain in GaAs Hall devices has been in-vestigated by using computer simulation.The output impendance of the devices will inc-rease and the sensitivity of Hall devices will be correspondingly enhanced by one order ofmagnitude when the stationary domain occurs n the bulk and extends to the voltage controlterminal.A new Hall device operating at tthe stationary domain model has been fabricatedand the new devices will be widely used