%0 Journal Article
%T A New High Sensitivity GaAs Hall Devices Fabricated by means of Stationary Domain Model<br>利用静止畴原理制作的高灵敏度新型GaAs Hall器件
%A Zheng Yiyang/Institute of Semiconductors
%A Academia Sinica
%A Beijing
%A <br>郑一阳
%J 半导体学报
%D 1989
%I 
%X The opration primciple of the stationary domain in GaAs Hall devices has been in-vestigated by using computer simulation.The output impendance of the devices will inc-rease and the sensitivity of Hall devices will be correspondingly enhanced by one order ofmagnitude when the stationary domain occurs n the bulk and extends to the voltage controlterminal.A new Hall device operating at tthe stationary domain model has been fabricatedand the new devices will be widely used
%K GaAs
%K Hall Devices
%K High Sensitivity
%K Stationary Domain Model<br>Hall器件
%K 静止畴模式
%K GaAs
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=0B86DB9ED64C8D47&yid=1833A6AA51F779C1&vid=F3090AE9B60B7ED1&iid=CA4FD0336C81A37A&sid=5D71B28100102720&eid=4F2F18DD6F870C2C&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=2