Reducing Barrier Height of PtSi Schotty Diode Using Ion Injection Doping
离子注入降低PtSi肖特基二极管的势垒高度

The cutoff wavelength and the quantum efficiency of PtSi infrared detector are restricted by its Schottky barrier height. A technique is developed of doping In\++ and B\++ at the PtSi/Si interface to reduce the barrier height to 0 15eV. Higher doping ion concentration and thin p + layer can avoid the tunneling effect. Annealing in Ar atmosphere relieves the doped defect, and additional mask layer controls the depth of ion doping.