%0 Journal Article
%T Reducing Barrier Height of PtSi Schotty Diode Using Ion Injection Doping<br>离子注入降低PtSi肖特基二极管的势垒高度
%A LIU Shuang
%A NING Yong
%A |gong
%A YANG Zhong
%A |xiao
%A CHEN Ai
%A <br>刘爽
%A 宁永功
%A 杨忠孝
%A 陈艾
%A 熊平
%A 杨家德
%J 半导体学报
%D 2000
%I 
%X The cutoff wavelength and the quantum efficiency of PtSi infrared detector are restricted by its Schottky barrier height. A technique is developed of doping In\++ and B\++ at the PtSi/Si interface to reduce the barrier height to 0 15eV. Higher doping ion concentration and thin p + layer can avoid the tunneling effect. Annealing in Ar atmosphere relieves the doped defect, and additional mask layer controls the depth of ion doping.
%K PtSi
%K Schottky diode
%K barrier height
%K ion injection doping method<br>PtSi
%K 肖特基二极管
%K 势垒高度
%K 离子注入
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=E0E61C5FDEB490ED&yid=9806D0D4EAA9BED3&vid=659D3B06EBF534A7&iid=F3090AE9B60B7ED1&sid=6A2E9D0F5619615A&eid=4E3F821C82005C21&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=12