OALib Journal期刊
ISSN: 2333-9721
费用:99美元
|
|
|
Study of Positron Annihilation Characteristics in SI-n-GaAs SI~-、n-GaAs正电子湮没特性的研究
Wu Fengmei/Departmant of Physics, Nanjing University, NanjingShen Dexun/Departmant of Physics, Nanjing University, NanjingDeng Minkang/Departmant of Physics, Nanjing University, NanjingCheng Ling/Departmant of Physics, Nanjing University, NanjingTang Jie/Departmant of Physics, Nanjing University, NanjingZhang Dehong/Nanjing Electronic Device Institute, Nanjing, 吴凤美, 沈德勋, 滕敏康, 陈岭, 唐杰, 张德宏
Keywords: GaAs,Positron annihilation technique,Long lifetime component,Mean li-fetime,Bulk lfetime vacancy type defects,Muulti-Ga-vacancy GaAs,正电子湮没技术,长寿命分量,平均寿命,基块寿命,空位类型缺陷,多镓空位
Abstract:
用正电子湮没技术,研究了半绝缘(SI)和掺Te的n型GaAs的退火行为及外延工艺的影响.结果表明,GaAs的平均寿命τ_M,长寿命τ_2,和基块寿命τ_b依赖于掺杂,同时τ_2的变化与镓空位和多镓空位均有关.外延后,由于退火的效果,I_2的降低和τ_2的增加是明显的.文中还讨论了电子和中子辐照的影响.
Full-Text
|
|
Contact Us
service@oalib.com QQ:3279437679 
WhatsApp +8615387084133
|
|