%0 Journal Article
%T Study of Positron Annihilation Characteristics in SI-n-GaAs<br>SI~-、n-GaAs正电子湮没特性的研究
%A Wu Fengmei/Departmant of Physics
%A Nanjing University
%A NanjingShen Dexun/Departmant of Physics
%A Nanjing University
%A NanjingDeng Minkang/Departmant of Physics
%A Nanjing University
%A NanjingCheng Ling/Departmant of Physics
%A Nanjing University
%A NanjingTang Jie/Departmant of Physics
%A Nanjing University
%A NanjingZhang Dehong/Nanjing Electronic Device Institute
%A Nanjing
%A <br>吴凤美
%A 沈德勋
%A 滕敏康
%A 陈岭
%A 唐杰
%A 张德宏
%J 半导体学报
%D 1989
%I 
%X 用正电子湮没技术,研究了半绝缘(SI)和掺Te的n型GaAs的退火行为及外延工艺的影响.结果表明,GaAs的平均寿命τ_M,长寿命τ_2,和基块寿命τ_b依赖于掺杂,同时τ_2的变化与镓空位和多镓空位均有关.外延后,由于退火的效果,I_2的降低和τ_2的增加是明显的.文中还讨论了电子和中子辐照的影响.
%K GaAs
%K Positron annihilation technique
%K Long lifetime component
%K Mean li-fetime
%K Bulk lfetime vacancy type defects
%K Muulti-Ga-vacancy<br>GaAs
%K 正电子湮没技术
%K 长寿命分量
%K 平均寿命
%K 基块寿命
%K 空位类型缺陷
%K 多镓空位
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=9FED3436A177DB9D&yid=1833A6AA51F779C1&vid=F3090AE9B60B7ED1&iid=CA4FD0336C81A37A&sid=13553B2D12F347E8&eid=EA389574707BDED3&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0