Core Level Chemical Shift for Silicon Surface Atoms
硅表面原子芯态能级的化学位移

A direct method based on Bond Obital Model from the true atomic wave functions issuggested for the calculation of core level shifts with both clean and adsorbel surfaces, takingthe Si(2p) electron on (100) surface as an example.The results are in agreement with theexperimental data.This demonstrates the application of the methed to the problem.