%0 Journal Article
%T Core Level Chemical Shift for Silicon Surface Atoms<br>硅表面原子芯态能级的化学位移
%A Xing Yirong/Institute of Semiconductors
%A Academia Sinica
%A BeijingZhong Xuefu/Institute of Semiconductors
%A Academia Sinica
%A Beijing
%A <br>邢益荣
%A 钟学富
%J 半导体学报
%D 1989
%I 
%X A direct method based on Bond Obital Model from the true atomic wave functions issuggested for the calculation of core level shifts with both clean and adsorbel surfaces, takingthe Si(2p) electron on (100) surface as an example.The results are in agreement with theexperimental data.This demonstrates the application of the methed to the problem.
%K Silicon
%K Surface
%K Core level
%K Chemical shift<br>硅
%K 表面
%K 芯能级
%K 化学位移
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=7B724D481C82A02C&yid=1833A6AA51F779C1&vid=F3090AE9B60B7ED1&iid=CA4FD0336C81A37A&sid=5D311CA918CA9A03&eid=708DD6B15D2464E8&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=4