Macromodel for Single Electron Transistor Based on Non-Linear Dependent Voltage Source
基于非线性受控电压源的单电子晶体管宏模型

A novel macromodel for single elect ron transistor based on non-linear dependent voltage source is presented.The ma cromodel makes use of dependent voltage source controlled by temperature and gat e voltage to make the simulations of the temperature effect and gate effect more convenient and get more accurate result.Furthermore,its circuit structure is si mple and it can be implemented easily in SPICE program for SET simulations with less CPU time compared with usual Monte Carlo method.