%0 Journal Article
%T Macromodel for Single Electron Transistor Based on Non-Linear Dependent Voltage Source<br>基于非线性受控电压源的单电子晶体管宏模型
%A 吕明
%A 蒋建飞
%A 蔡琪玉
%J 半导体学报
%D 2004
%I 
%X A novel macromodel for single elect ron transistor based on non-linear dependent voltage source is presented.The ma cromodel makes use of dependent voltage source controlled by temperature and gat e voltage to make the simulations of the temperature effect and gate effect more convenient and get more accurate result.Furthermore,its circuit structure is si mple and it can be implemented easily in SPICE program for SET simulations with less CPU time compared with usual Monte Carlo method.
%K single electron transistor
%K Coulomb blockade
%K macromodel
%K Monte-Carlo<br>单电子晶体管
%K 库仑阻塞
%K 宏模型
%K 蒙特卡罗方法
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=5F681AF5E6FC76E7&yid=D0E58B75BFD8E51C&vid=C5154311167311FE&iid=9CF7A0430CBB2DFD&sid=D5BEB939E141E547&eid=09D7E2FA8227CA7B&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=12