The interplane spin cross relaxation time Tx measured by high frequency ESR in X-ray irradiated κ-(BEDT-TTF) 2Cu[N(CN) 2]Cl is compared to the interplane resisitivity ρ⊥and the in-plane resistivity ρII between 50 K and 250 K. The irradiation transforms the semiconductor behavior of the non-irradiated crystal into metallic. Irradiation decreases Tx , ρ⊥ and ρII？but the ratio Tx/ ρ⊥？and ρ⊥/ ρII？remain unchanged between 50 and 250 K. Models describing the unusual defect concentration dependence in κ-(BEDT-TTF) 2Cu[N(CN) 2]Cl are discussed.
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