%0 Journal Article
%T Spin and Charge Transport in the X-ray Irradiated Quasi-2D Layered Compound: 百-(BEDT-TTF)2Cu[N(CN)2]Cl
%A 芍gnes Antal
%A Titusz Feh谷r
%A Naoki Yoneyama
%A L芍szl車 Forr車
%A Takahiko Sasaki
%A Andr芍s J芍nossy
%J Crystals
%D 2012
%I MDPI AG
%R 10.3390/cryst2020579
%X The interplane spin cross relaxation time Tx measured by high frequency ESR in X-ray irradiated 百-(BEDT-TTF) 2Cu[N(CN) 2]Cl is compared to the interplane resisitivity 老﹠and the in-plane resistivity 老II between 50 K and 250 K. The irradiation transforms the semiconductor behavior of the non-irradiated crystal into metallic. Irradiation decreases Tx , 老﹠ and 老IIˋbut the ratio Tx/ 老﹠ˋand 老﹠/ 老IIˋremain unchanged between 50 and 250 K. Models describing the unusual defect concentration dependence in 百-(BEDT-TTF) 2Cu[N(CN) 2]Cl are discussed.
%K organic
%K two dimensional
%K X-ray irradiation
%U http://www.mdpi.com/2073-4352/2/2/579