THE APPROXIMATION OF THE ELECTROSTIC POTENTIAL BY A MIXED METHOD IN THE SIMULATION OF SEMICONDUCTOR
半导体器件数值模拟的混合元逼近

The transient behaviov of a semiconductor device is described by a system of three qua-silinear partial differential equations,one ellipic in form for the electric potential and twoparabolic in form for the conservation of electron and hole concentrations.The electric ppo-tential appears in the concentration only through its electric field strength,and it is appropriateto choose a numerical method that approximates the electric field strength.The electric po-tential equation is discretized by a mixed finite element method.The electron and hold den-sity equations are treated by a Galerkin method.Optimal order estimates are derived.