%0 Journal Article %T THE APPROXIMATION OF THE ELECTROSTIC POTENTIAL BY A MIXED METHOD IN THE SIMULATION OF SEMICONDUCTOR
半导体器件数值模拟的混合元逼近 %A YUAN YI-RANG %A
袁益让 %J 系统科学与数学 %D 1991 %I %X The transient behaviov of a semiconductor device is described by a system of three qua-silinear partial differential equations,one ellipic in form for the electric potential and twoparabolic in form for the conservation of electron and hole concentrations.The electric ppo-tential appears in the concentration only through its electric field strength,and it is appropriateto choose a numerical method that approximates the electric field strength.The electric po-tential equation is discretized by a mixed finite element method.The electron and hold den-sity equations are treated by a Galerkin method.Optimal order estimates are derived. %U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=37F46C35E03B4B86&jid=0CD45CC5E994895A7F41A783D4235EC2&aid=427F4097E1EAB9573078C81602E34E12&yid=116CB34717B0B183&vid=708DD6B15D2464E8&iid=0B39A22176CE99FB&sid=7555FB9CC973F695&eid=2B5DE8A23DCEED39&journal_id=1000-0577&journal_name=系统科学与数学&referenced_num=0&reference_num=0