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无机材料学报 2001
Effects of Ion Implantation on the Structure of Nano-Si3N4
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Abstract:
The effects of ion implantation on the structure of nano-Si3N4 was studied by means of FT-IR, XPS and photoluminescence spectra. The energy level scheme and the energy structure of nano-Si3N4 were given. The results show that ion implantation makes free Si in the material change to SiNn(n=l, 2), and nano-Si3N4 possesses a quantum confinement effect, and its photoluminescence peak position and intensity are unstable.
