%0 Journal Article
%T Effects of Ion Implantation on the Structure of Nano-Si3N4<br>离子注入对纳米Si3N4结构的影响
%A TU Xian-Hua
%A LI Dao-Huo
%A ZHAO Hua-Zhen
%A ZHAN Ming-Sheng
%A <br>涂鲜花
%A 李道火
%A 赵华珍
%A 詹明生
%J 无机材料学报
%D 2001
%I Science Press
%X The effects of ion implantation on the structure of nano-Si3N4 was studied by means of FT-IR, XPS and photoluminescence spectra. The energy level scheme and the energy structure of nano-Si3N4 were given. The results show that ion implantation makes free Si in the material change to SiNn(n=l, 2), and nano-Si3N4 possesses a quantum confinement effect, and its photoluminescence peak position and intensity are unstable.
%K quantum confinement
%K unstablity of photoluminescence
%K ion implantation
%K nano-Si3N4<br>量子限制效应
%K 离子注入
%K 纳米氮化硅
%K 结构
%K 荧光谱
%K 光学性质
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=84529CA2B2E519AC&jid=ABC0063016AF57E1C73EF43C8D2212BD&aid=E1CEE8BBF46F91C8&yid=14E7EF987E4155E6&vid=7801E6FC5AE9020C&iid=0B39A22176CE99FB&sid=F7BB24011DC0D223&eid=965F4E89CD0AFC30&journal_id=1000-324X&journal_name=无机材料学报&referenced_num=0&reference_num=6