Recent Advances in Research on p-Type ZnO
ZnO薄膜p型掺杂的研究进展

ZnO is a novel material for II-VI semiconductor. Researches indicate that n-type ZnO films can be well prepared, this is due to the high self-compensating process on doping derived from the intrinsic donor defects such as oxygen vacancy (Vo) and zinc interstitial (Znj) atoms, so n-typed ZnO films are formed naturally and p-type ZnO films are difficult to be prepared. How to realize p-type ZnO films through doping is the key step for application in the fields of ZnO-based opoelectrical devices, in which great progresses have been made now. This paper summarized the recent advances in research on p-type ZnO.