%0 Journal Article
%T Recent Advances in Research on p-Type ZnO<br>ZnO薄膜p型掺杂的研究进展
%A YE Zhi-Zhen
%A ZHANG Yin-Zhu
%A XU Wei-Zhong
%A LU Jian-Guo
%A <br>叶志镇
%A 张银珠
%A 徐伟中
%A 吕建国
%J 无机材料学报
%D 2003
%I Science Press
%X ZnO is a novel material for II-VI semiconductor. Researches indicate that n-type ZnO films can be well prepared, this is due to the high self-compensating process on doping derived from the intrinsic donor defects such as oxygen vacancy (Vo) and zinc interstitial (Znj) atoms, so n-typed ZnO films are formed naturally and p-type ZnO films are difficult to be prepared. How to realize p-type ZnO films through doping is the key step for application in the fields of ZnO-based opoelectrical devices, in which great progresses have been made now. This paper summarized the recent advances in research on p-type ZnO.
%K zinc oxide thin film
%K p-type ZnO
%K property<br>研究进展
%K ZnO薄膜
%K p型掺杂
%K 氧化锌
%K 半导体
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=84529CA2B2E519AC&jid=ABC0063016AF57E1C73EF43C8D2212BD&aid=862256AD2EB8ACA5&yid=D43C4A19B2EE3C0A&vid=13553B2D12F347E8&iid=CA4FD0336C81A37A&sid=708DD6B15D2464E8&eid=13553B2D12F347E8&journal_id=1000-324X&journal_name=无机材料学报&referenced_num=13&reference_num=46