GaN Growth on LiGaO2(001) with MOCVD
用MOCVD法在LiGaO2(001)上生长GaN的研究

LiGaO2 is the most promising substrate newly found for the epitaxy of GaN. Mirror-like GaN(0001) films were grown on LiGaO2(001) substrates by using MOCVD. The GaN films and substrates were investigated by means of AFM, XRD and X-ray double-crystal diffraction. The result shows that a preferable quality of GaN(0001) films can be grown on LiGaO2(001) substrates by using MOCVD. LiGaO2 being unstable under the conditions of MOCVD which should be operated at high temperature and in deoxidize ambience, LiGaO2 substrate cracks appear easily in the growth process, but no phase changes.