%0 Journal Article
%T GaN Growth on LiGaO2(001) with MOCVD<br>用MOCVD法在LiGaO2(001)上生长GaN的研究
%A YANG Wei-Qiao
%A GAN Fu-Xi
%A DENG Pei-Zhen
%A XU Jun
%A LI Shu-Zhi
%A ZHANG Rong
%A <br>杨卫桥
%A 干福熹
%A 邓佩珍
%A 徐军
%A 李抒智
%A 张荣
%J 无机材料学报
%D 2003
%I Science Press
%X LiGaO2 is the most promising substrate newly found for the epitaxy of GaN. Mirror-like GaN(0001) films were grown on LiGaO2(001) substrates by using MOCVD. The GaN films and substrates were investigated by means of AFM, XRD and X-ray double-crystal diffraction. The result shows that a preferable quality of GaN(0001) films can be grown on LiGaO2(001) substrates by using MOCVD. LiGaO2 being unstable under the conditions of MOCVD which should be operated at high temperature and in deoxidize ambience, LiGaO2 substrate cracks appear easily in the growth process, but no phase changes.
%K GaN
%K LiGaO2
%K MOCVD<br>GaN
%K LiGaO2
%K MOCVD法
%K 半导体材料
%K 氮化镓
%K 金属有机物气相沉积
%K 外延薄膜
%K 外延生长
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=84529CA2B2E519AC&jid=ABC0063016AF57E1C73EF43C8D2212BD&aid=7DB6D6D5F99D0349&yid=D43C4A19B2EE3C0A&vid=13553B2D12F347E8&iid=CA4FD0336C81A37A&sid=1B64850025D0BBBE&eid=D5C73DEF4CF8FAF3&journal_id=1000-324X&journal_name=无机材料学报&referenced_num=1&reference_num=6