X-ray Photoelectron Spectroscopy Studies of ITO Thin Films
ITO薄膜的光电子能谱分析

The chemical states of In, Sn and O in Sn-doped In2O3 films were investigated byusing X-ray photoelectron spectroscopy. The results indicate that Sn and In respectively exist ina same chemical state for both as-deposited and post-annealed films. Two types of O2- ions, OI and OII, can be distinguished by Gaussian simulation. OI has a binding energy of 529.90±0.30 eVwhich is in oxygen sufficient region, and OII has a binding energy of 531.40±0.2 eV which is inoxygen deficient regions. Oxygen deficient regions mainly exist in the surface layer.