%0 Journal Article
%T X-ray Photoelectron Spectroscopy Studies of ITO Thin Films<br>ITO薄膜的光电子能谱分析
%A CHEN Meng
%A PEI Zhi-Liang
%A BAI Xue-Dong
%A HUANG Rong-Fang
%A WEN Li-Shi
%A <br>陈猛
%A 裴志亮
%A 白雪冬
%A 黄荣芳
%A 闻立时
%J 无机材料学报
%D 2000
%I Science Press
%X The chemical states of In, Sn and O in Sn-doped In2O3 films were investigated byusing X-ray photoelectron spectroscopy. The results indicate that Sn and In respectively exist ina same chemical state for both as-deposited and post-annealed films. Two types of O2- ions, OI and OII, can be distinguished by Gaussian simulation. OI has a binding energy of 529.90±0.30 eVwhich is in oxygen sufficient region, and OII has a binding energy of 531.40±0.2 eV which is inoxygen deficient regions. Oxygen deficient regions mainly exist in the surface layer.
%K chemical state
%K XPS
%K Gaussian simulation<br>化学状态
%K 光电子能谱
%K 拟合
%K ITO薄膜
%K 半导体薄膜
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=84529CA2B2E519AC&jid=ABC0063016AF57E1C73EF43C8D2212BD&aid=D97BFC8F773D9DD1&yid=9806D0D4EAA9BED3&vid=23CCDDCD68FFCC2F&iid=CA4FD0336C81A37A&sid=847B14427F4BF76A&eid=C29816B2656377A7&journal_id=1000-324X&journal_name=无机材料学报&referenced_num=11&reference_num=11