Research on the Growth Defects of KTiOAsO4 Crystal
KTiOAsO4晶体的生长缺陷研究

It is significant to research the growth defects of KTiOAsO4 crystal in order to improve its physical properties and applications. The growth defects of KTA were studied by the methods of optical micrography and synchrotron radiation topography. The result indicates that two kinds of etchant produce a marked effect to show the defects of KTA crystal, and the main defects in KTA crystal are ferroelectric domain, growth striation, sector boundary, dislocation and inclusion. The forming cause of the defects was also discussed.