%0 Journal Article
%T Research on the Growth Defects of KTiOAsO4 Crystal<br>KTiOAsO4晶体的生长缺陷研究
%A MOU Qi-Shan
%A LIU Xi-Ling
%A MA Chang-Qin
%A WANG Xu-Ning
%A LU Qing-Ming
%A <br>牟其善
%A 刘希玲
%A 马长勤
%A 王绪宁
%A 路庆明
%J 无机材料学报
%D 2000
%I Science Press
%X It is significant to research the growth defects of KTiOAsO4 crystal in order to improve its physical properties and applications. The growth defects of KTA were studied by the methods of optical micrography and synchrotron radiation topography. The result indicates that two kinds of etchant produce a marked effect to show the defects of KTA crystal, and the main defects in KTA crystal are ferroelectric domain, growth striation, sector boundary, dislocation and inclusion. The forming cause of the defects was also discussed.
%K KTiOAsO4 crystal
%K synchrotron radiation topography
%K defect
%K ferroelectric domain<br>KTiOAsO4
%K 缺陷
%K 铁电醇
%K 晶体生长
%K 非线性光学晶体
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=84529CA2B2E519AC&jid=ABC0063016AF57E1C73EF43C8D2212BD&aid=BD8D7F9EE7C58593&yid=9806D0D4EAA9BED3&vid=23CCDDCD68FFCC2F&iid=E158A972A605785F&sid=E04FC1B5BC47587B&eid=4964C30D71DF45FF&journal_id=1000-324X&journal_name=无机材料学报&referenced_num=3&reference_num=8