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无机材料学报 2004
Hysteresis Loops Characteristics of Bi4Ti3O12 Ferroelectric Thin Films with Different Configuration on Si Substrates
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Abstract:
In order to fabricate high quality ferroelectric thin films qualified for ferroelectric memories, different ferroelectric thin film systems, with the structures of MFM and MFS, were deposited by using the sol-gel technique. The ferroelectric properties and the P-V hysteresis loops characteristics of these different ferroelectric thin film systems were analyzed with comparison. Based on the test results, a new practicable configuration of Ag/Pb(Zr0.52Ti0.48)O3/ Bi4Ti3O12/p-Si was fabricated, which can improve the ferroelectric properties and hysteresis loops characteristics of the ferroelectric thin films.
