%0 Journal Article
%T Hysteresis Loops Characteristics of Bi4Ti3O12 Ferroelectric Thin Films with Different Configuration on Si Substrates<br>结构设计对铁电薄膜系统电滞回线的影响
%A WANG Hua
%A <br>王华
%J 无机材料学报
%D 2004
%I Science Press
%X In order to fabricate high quality ferroelectric thin films qualified for ferroelectric memories, different ferroelectric thin film systems, with the structures of MFM and MFS, were deposited by using the sol-gel technique. The ferroelectric properties and the P-V hysteresis loops characteristics of these different ferroelectric thin film systems were analyzed with comparison. Based on the test results, a new practicable configuration of Ag/Pb(Zr0.52Ti0.48)O3/ Bi4Ti3O12/p-Si was fabricated, which can improve the ferroelectric properties and hysteresis loops characteristics of the ferroelectric thin films.
%K ferroelectric thin films
%K P-V hysteresis loops characteristics
%K sol-gel method<br>铁电薄膜
%K 电滞回线
%K sol—gel工艺
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=84529CA2B2E519AC&jid=ABC0063016AF57E1C73EF43C8D2212BD&aid=6E0179A0D1C6CB04&yid=D0E58B75BFD8E51C&vid=2A8D03AD8076A2E3&iid=CA4FD0336C81A37A&sid=D59111839E7C8BDF&eid=4C100B7696CE9E24&journal_id=1000-324X&journal_name=无机材料学报&referenced_num=2&reference_num=8