Study on c BN Films Deposited by r f Plasma assisted CVD
r.f.PCVD法制备c-BN膜的研究

Boron nitride (BN) films were deposited on a pre-boronised AISI 5140 substrate by r. f. plasma-assisted CVD technique, with nitrogen (N2), hydrogen (H2) or H2 diluted at 10 vol% in argon (Ar) being carrier gas. It was found by FTIR and SEM analyses that for the three kinds of carrier gas the c-BN content was the highest if Ar+10% H2 was used, the film thickness was the thinnest if H2 was used, and the bonding strength of the film determined through indentation test, was the poorest if N2 was used as the carrier gas. TEM analysis indicated that most of the films were the mixtures of amorphous and cubic BN phases, with the sizes of the c-BN particles being 20--40 nm.