%0 Journal Article
%T Study on c BN Films Deposited by r f Plasma assisted CVD<br>r.f.PCVD法制备c-BN膜的研究
%A ZHANG Xiao-Ling
%A HU Nai-Sai
%A HE Jia-Wen
%A <br>张晓玲
%A 胡奈赛
%A 何家文
%J 无机材料学报
%D 1999
%I Science Press
%X Boron nitride (BN) films were deposited on a pre-boronised AISI 5140 substrate by r. f. plasma-assisted CVD technique, with nitrogen (N2), hydrogen (H2) or H2 diluted at 10 vol% in argon (Ar) being carrier gas. It was found by FTIR and SEM analyses that for the three kinds of carrier gas the c-BN content was the highest if Ar+10% H2 was used, the film thickness was the thinnest if H2 was used, and the bonding strength of the film determined through indentation test, was the poorest if N2 was used as the carrier gas. TEM analysis indicated that most of the films were the mixtures of amorphous and cubic BN phases, with the sizes of the c-BN particles being 20--40 nm.
%K c
%K BN films
%K r
%K f
%K PCVD
%K carrier gas<br>c－BN膜
%K PCVD
%K 镀膜
%K 制备
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=84529CA2B2E519AC&jid=ABC0063016AF57E1C73EF43C8D2212BD&aid=9695ECDE9E8396FD&yid=B914830F5B1D1078&vid=F3583C8E78166B9E&iid=E158A972A605785F&sid=D647AF4730396036&eid=EF9E84B2DA79FF23&journal_id=1000-324X&journal_name=无机材料学报&referenced_num=0&reference_num=25