Effect of ZrO2 Dopant on the Electrical and Gas Sensing Properties of SnO2 Thin Films Prepared by the Sol-Gel Technique
ZrO2掺杂对SnO2薄膜电性及气敏性的影响

SnO2(ZrO2) thin films with different dopant concentrations were deposited on soda-glass sheets by the Sol-Gel technique, using non-alkoxide SnCl2.2H2O as main precursor, Zr(OC3H7)4 as dopant, ethanol as solvent. The effect of ZrO2 dopant concentration on the efectrical and gas sensing was studicd. We found that the ZrO2-SnO2 thin films prepared by this method havc very good gas sensitivity, excellent selectivity, rapid rcspionse and recovery behaviour to H2S at room temperature.