%0 Journal Article
%T Effect of ZrO2 Dopant on the Electrical and Gas Sensing Properties of SnO2 Thin Films Prepared by the Sol-Gel Technique<br>ZrO2掺杂对SnO2薄膜电性及气敏性的影响
%A FANG Guojia
%A LIU Zuli
%A ZHANG Jie
%A YAO Kailun
%A <br>方国家
%A 刘祖黎
%A 张杰
%A 姚凯伦
%J 无机材料学报
%D 1997
%I Science Press
%X SnO2(ZrO2) thin films with different dopant concentrations were deposited on soda-glass sheets by the Sol-Gel technique, using non-alkoxide SnCl2.2H2O as main precursor, Zr(OC3H7)4 as dopant, ethanol as solvent. The effect of ZrO2 dopant concentration on the efectrical and gas sensing was studicd. We found that the ZrO2-SnO2 thin films prepared by this method havc very good gas sensitivity, excellent selectivity, rapid rcspionse and recovery behaviour to H2S at room temperature.
%K ZrO_2 doped SnO_2 thin films
%K Sol-Gel technique
%K ZrO_2 dopant concentration
%K electrical and gas sensing properties<br>掺杂
%K 气敏性
%K 二氧化锡薄膜
%K 陶瓷薄膜
%K 二氧化锆
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=84529CA2B2E519AC&jid=ABC0063016AF57E1C73EF43C8D2212BD&aid=76EBA4C8813A5785EEC26C4D0F7B45D5&yid=5370399DC954B911&vid=59906B3B2830C2C5&iid=CA4FD0336C81A37A&sid=6AC2A205FBB0EF23&eid=0401E2DB1F51F8DE&journal_id=1000-324X&journal_name=无机材料学报&referenced_num=2&reference_num=11