Changes of Properties and Structure in Amorphous GeS2 Films by Laser Illumination
激光作用下GeS2非晶半导体薄膜的性能及结构变化

The changes of properties and structure in GeS2 amorphous semiconductor films by light illumination from Ar ion laser were studied with the XRD, IR, SEM and transmission spectra analysises. Photoinduced crystallization was also observed in the exposed films. The results show that the optical absorption edges of the films shift to shorter wavelength according to annealing and light illumination. The magnitude of shift increases with the increase of the intensity of illumination light and the illumination time, and the shift in annealed films is reversible.