%0 Journal Article
%T Changes of Properties and Structure in Amorphous GeS2 Films by Laser Illumination<br>激光作用下GeS2非晶半导体薄膜的性能及结构变化
%A LIU Qi-Ming
%A GAN Fu-Xi
%A GU Dong-Hong
%A <br>刘启明
%A 干福熹
%A 顾冬红
%J 无机材料学报
%D 2002
%I Science Press
%X The changes of properties and structure in GeS2 amorphous semiconductor films by light illumination from Ar ion laser were studied with the XRD, IR, SEM and transmission spectra analysises. Photoinduced crystallization was also observed in the exposed films. The results show that the optical absorption edges of the films shift to shorter wavelength according to annealing and light illumination. The magnitude of shift increases with the increase of the intensity of illumination light and the illumination time, and the shift in annealed films is reversible.
%K amorphous GeS2 film
%K ar ion laser illumination
%K photoinduced change<br>激光辐照
%K GeS2
%K 非晶半导体薄膜
%K 性能
%K 结构
%K 氩离子
%K 光致变化
%K 硫化锗
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=84529CA2B2E519AC&jid=ABC0063016AF57E1C73EF43C8D2212BD&aid=6CBA83F24C379F6B&yid=C3ACC247184A22C1&vid=BCA2697F357F2001&iid=E158A972A605785F&sid=8C8D39B86A1EED4F&eid=4A2C67480A6B9F95&journal_id=1000-324X&journal_name=无机材料学报&referenced_num=1&reference_num=18