Optical Properties of a-GaN Film Deposited by DC Magnetron Sputtering
溅射制备非晶氮化镓薄膜的光学性能

GaN thin films were prepared by direct current (DC) planar magnetron sputtering on Si and SiO$_2$. The films were characterized by X-ray diffraction (XRD), Raman, Fourier Transform Infrared Spectroscopy (FTIR), photoluminescence (PL) and UV-Vis spectra. XRD and Raman spectrum show that the films are amorphous. Fourier infrared absorbance spectrum shows that the main absorbance is Ga-N stretching vibration. 360nm ultraviolet emission is obtained at room temperature. UV-Vis result shows that the optical band gap of the films is 3.74eV, which is consistent with photoluminescence spectrum result. \vspace*{.2cm