%0 Journal Article
%T Optical Properties of a-GaN Film Deposited by DC Magnetron Sputtering<br>溅射制备非晶氮化镓薄膜的光学性能
%A PAN Xiao-Jun
%A ZHANG Zhen-Xing
%A JIA Lu
%A LI Hui
%A XIE Er-Qing
%A <br>潘孝军
%A 张振兴
%A 贾璐
%A 李晖
%A 谢二庆
%J 无机材料学报
%D 2007
%I Science Press
%X GaN thin films were prepared by direct current (DC) planar magnetron sputtering on Si and SiO$_2$. The films were characterized by X-ray diffraction (XRD), Raman, Fourier Transform Infrared Spectroscopy (FTIR), photoluminescence (PL) and UV-Vis spectra. XRD and Raman spectrum show that the films are amorphous. Fourier infrared absorbance spectrum shows that the main absorbance is Ga-N stretching vibration. 360nm ultraviolet emission is obtained at room temperature. UV-Vis result shows that the optical band gap of the films is 3.74eV, which is consistent with photoluminescence spectrum result. \vspace*{.2cm
%K amorphous GaN
%K DC sputtering
%K optical properties<br>非晶氮化镓
%K 溅射制备
%K 光学性能
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=84529CA2B2E519AC&jid=ABC0063016AF57E1C73EF43C8D2212BD&aid=B781CAD4105CC19C&yid=A732AF04DDA03BB3&vid=BC12EA701C895178&iid=E158A972A605785F&sid=00B9006659EBD8AC&eid=4D1A534FF6CD5D9A&journal_id=1000-324X&journal_name=无机材料学报&referenced_num=0&reference_num=22