Influence of Tiny ZnO on Luminescence Intensity of Zn2SiO4:Mn Films
掺Mn硅酸锌薄膜中微量氧化锌对发光强度的影响

Magnesium-doped zinc silicate(Zn_2SiO_4:Mn)was prepared on oxidized silicon wafer by a simple sol-gel process.The crystallinity of films was characterized by X-ray diffraction and optical properties were measured by UV-Vis and photoluminescence spectra.The influence of annealing temperature on films properties was also studied systematically.It's found that proper ZnO can enhance the photoluminescence intensity of Zn_2SiO_4:Mn films.And the mechanism was explained by using the model of quantum confinement-luminescence center proposed by G.G.Qin.