%0 Journal Article
%T Influence of Tiny ZnO on Luminescence Intensity of Zn2SiO4:Mn Films<br>掺Mn硅酸锌薄膜中微量氧化锌对发光强度的影响
%A XI Jun-Hua
%A JI Zhen-Guo
%A LIU Kun
%A WANG Chao
%A DU Juan
%A <br>席俊华
%A 季振国
%A 刘 坤
%A 王 超
%A 杜 鹃
%J 无机材料学报
%D 2006
%I Science Press
%X Magnesium-doped zinc silicate(Zn_2SiO_4:Mn)was prepared on oxidized silicon wafer by a simple sol-gel process.The crystallinity of films was characterized by X-ray diffraction and optical properties were measured by UV-Vis and photoluminescence spectra.The influence of annealing temperature on films properties was also studied systematically.It's found that proper ZnO can enhance the photoluminescence intensity of Zn_2SiO_4:Mn films.And the mechanism was explained by using the model of quantum confinement-luminescence center proposed by G.G.Qin.
%K Zn2SiO4
%K ZnO
%K photoluminescence
%K quantum confinement-luminescence center<br>硅酸锌
%K 氧化锌
%K 光致发光
%K 量子约束-发光中心
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=84529CA2B2E519AC&jid=ABC0063016AF57E1C73EF43C8D2212BD&aid=5BAE555776612028&yid=37904DC365DD7266&vid=659D3B06EBF534A7&iid=B31275AF3241DB2D&sid=33A7C6BD53CDAB47&eid=C32BEECEF5323D34&journal_id=1000-324X&journal_name=无机材料学报&referenced_num=0&reference_num=21