Recent progress in preparation of material and device of two-dimensional MoS2
二维辉钼材料及器件研究进展

After several decade developments the critical dimension of an integrated circuit will reach its limit value in the next 10-15 years, and the substitute materials been to be researched. Graphene has beed considered the most likely candidate, however, pristine graphene does not have a bandgap, a property that is essential for many application, including transistors. The two-dimensional layer of molybdenum disulfide (MoS2) has recently attracted much attention due to its excellent semiconductor property and potential applications in nanoelectronics. The device preparation, two-dimensional material research and property analysis of MoS2 are summarized and the trend for future research on large sigle-layer MoS2 crystal is presented.