%0 Journal Article
%T Recent progress in preparation of material and device of two-dimensional MoS2<br>二维辉钼材料及器件研究进展
%A Lai Zhan-Ping
%A <br>赖占平
%J 物理学报
%D 2013
%I 
%X After several decade developments the critical dimension of an integrated circuit will reach its limit value in the next 10-15 years, and the substitute materials been to be researched. Graphene has beed considered the most likely candidate, however, pristine graphene does not have a bandgap, a property that is essential for many application, including transistors. The two-dimensional layer of molybdenum disulfide (MoS2) has recently attracted much attention due to its excellent semiconductor property and potential applications in nanoelectronics. The device preparation, two-dimensional material research and property analysis of MoS2 are summarized and the trend for future research on large sigle-layer MoS2 crystal is presented.
%K MoS2
%K nanomaterial
%K integrated circuit<br>MoS2
%K 辉钼材料
%K 纳米材料
%K 集成电路
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=164B941495554643A6B7F15D4352C91B&yid=FF7AA908D58E97FA&iid=94C357A881DFC066&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=0