Effective g-factor in high-mobility InGaAs/InP Quantum well
高迁移率InGaAs/InP量子阱中的有效g因子

High-mobility In0.53Ga0.47As/InP quantum well is fabricated by the chemical beam epitaxy technique. Clear Shubnikov-de Hass (SdH) oscillation and beating pattern due to zero-field spin splitting are observed by magnetotransport measurements at low temperature. We use an analytical method, involving the simultaneous fitting of fast Fourier transform spectra of SdH oscillations at different tilted fields, to extract the effective g-factor.