%0 Journal Article
%T Effective g-factor in high-mobility InGaAs/InP Quantum well<br>高迁移率InGaAs/InP量子阱中的有效g因子
%A Wei Lai-Ming
%A Zhou Yuan-Ming
%A Yu Guo-Lin
%A Gao Kuang-Hong
%A Liu Xin-Zhi
%A Lin Tie
%A Guo Shao-Ling
%A Dai Ning
%A Chu Jun-Hao
%A Austing David Guy
%A <br>魏来明
%A 周远明
%A 俞国林
%A 高矿红
%A 刘新智
%A 林铁
%A 郭少令
%A 戴宁
%A 褚君浩
%A AustingDavidGuy
%J 物理学报
%D 2012
%I 
%X High-mobility In0.53Ga0.47As/InP quantum well is fabricated by the chemical beam epitaxy technique. Clear Shubnikov-de Hass (SdH) oscillation and beating pattern due to zero-field spin splitting are observed by magnetotransport measurements at low temperature. We use an analytical method, involving the simultaneous fitting of fast Fourier transform spectra of SdH oscillations at different tilted fields, to extract the effective g-factor.
%K g-factor
%K quantum well
%K magnetoresistance<br>g因子
%K 量子阱
%K 磁阻
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=78F360FC29C47911DE3292EA300C69D9&yid=99E9153A83D4CB11&vid=1D0FA33DA02ABACD&iid=59906B3B2830C2C5&sid=35E3652146A42206&eid=35E3652146A42206&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=26