The luminescence properties of a novel electron trapped material Sr2SnO4:Sb3+ for optical storage
新型电子俘获型光存储材料Sr2SnO4:Sb3+的发光性能研究

A novel electron trapped material Sr2SnO4:Sb3+ for optical storage is successfully obtained by conventional solid state method at 1300℃It indicates that the 1S0→1P1（208 nm） and 1S0→3P1（265 nm） transitions of Sb3+ are the most efficient writing light source.Its emission covers 400—700 nm and can be attributed to 3P0,1←→1S0 transition of Sb3+.We can observe yellowish white light and its color coordination is（0.341,0.395）.The thermoluminescence of Sr2SnO4:Sb3+ contains four peaks at about 39℃, 124℃,193℃and 310℃,respectively.The intensity of peak at 39℃is low and thus it has a weak afterglow which can last only 140 s.However,even after putting it in dark for 1 day,the peak at 310℃can still keep 45.6%of its original intensity and can be efficiently stimulated by 980 nm infrared laser.As a conclusion,the Sr2SnO4:Sb3+ is a promising electron trapping material for application in optical storage.